Hi
So I fixed most of the stuff you've pointed out now.
About the oxide thickness: We wanna avoid having a break through the oxide
when reaching 40V or so.
With 40nm we're pretty much at 40V for the breakthrough voltage.
I don't know how much the gates of your high power transistors can take?
But I guess they're also bound to the laws of physics.
We would like to sell those chips to automotive manufacturers, so going below
40nm isn't really an option I'm afraid.
I've added another annealing step for the p/n junction implants.

Cheers
        David

PS: Hagen and I got the same results for bright field and dark field mask
requirements, so it seems alright.
We're really close to ordering the mask set!

On Sunday, 4 November 2018 10:13:16 PM HKT Éger Ferenc wrote:
> Hello David,
> Acc. to the last conversation, the following concerns are identified (some
> may be RTFM): - Step 8.3 equipment is incorrect
> - Also step 8.3, is a tunnel oxide of 40nm thick is thin enough, or we need
> thinner? - Between 13.8 and 13.9, a cleaning step seems to be missing
> - When are the drain/source implants driven in? Is the annealing during
> silicide formation sufficient for drive-in? - The implantation dose and
> acceleration for the wells and the base/emitter layers are the same. -
> Implant stop nitride is 40nm grown, but etching is only for 10nm. - Al etch
> time is for 600nm, but the metal layer is 620nm thick. Also, will the Al
> etcher pass trough Ti?
>
> Regards,
> Ferenc


--
Best regards

CEO, David Lanzendörfer
Lanceville Technology
22A, Block2, China Phoenix Mansion,
No.2008 Shennan Boulevard,
Futian District, Shenzhen