Hello David,

Acc. to the last conversation, the following concerns are identified (some may be RTFM):

- Step 8.3 equipment is incorrect

- Also step 8.3, is a tunnel oxide of 40nm thick is thin enough, or we need thinner?

- Between 13.8 and 13.9, a cleaning step seems to be missing

- When are the drain/source implants driven in? Is the annealing during silicide formation sufficient for drive-in?

- The implantation dose and acceleration for the wells and the base/emitter layers are the same.

- Implant stop nitride is 40nm grown, but etching is only for 10nm.

- Al etch time is for 600nm, but the metal layer is 620nm thick. Also, will the Al etcher pass trough Ti?

Regards,

Ferenc