On 03/13/2018 11:13 AM, David Lanzendörfer wrote:
> Hi
> So I'd say we for now indeed just do 1um and then just run a 500nm node on
> 3.3V only for SoCs and thelike.
>
> After all, these SoCs and CPUs usually get a 3V3 rail from the ATX power
> supply anyway.
>
> But yeah, if 5V tolerance is required in 500nm technology we will have to use
> the l=1um transistors from the 1um technology within the l=500nm technology
> for the buffer transistors.
>
> Maybe we make "modular pad cells" which can be modified to provide 3V3 instead
> of 5V as well to the internal logic?
> Or maybe we just will have to modify our pad cells for the 500nm technology
> and require two power supplies, one for IO and one for internal circuitry?
> Or maybe have only one VDD and then a lot of linear voltage regulators built
> into the CMOS chips?
I'll think about that.
Unified IO-Cells should not be an issue as
- transistor sizes in Pad-Cells only depends on current they have to
drive outside and the ESD protection diodes;
- there limitation in size is and will be the pad size with approx.
90..100um by 90..100um itself.
This is decoupled from our feature size.
So, we can design IO-Pad-Cells with unified size, which applicable on
all our technology nodes. In the end, the layouter will choose the
Voltage-Supply-Cell he/she/it needs out of 5Volt, 3.3Volt or even lower
cells.
Voltage regulators are quite ugly while taking a lot of area and
spreading heat into the die. And, we do not have transformers on die.
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