Hi
During the meeting we found out that we don't need a nitride hard mask but can 
use an oxide mask in order to etch silicon with a plasma etcher.
Also I've found out that the variation of the CMP machine is terrible (~5um!)
Now that we have oxide should we just skip the CMP step and just grow our 
process oxide for the n-well/p-well construction over it?

@Staf: Can you maybe join this weeks mumble meeting and give some feedback?
I'll update the document until then, so that we can discuss it.

I'm sorry but I am spread too thin and have to focus on my project.

Anyway I don't know more about CMP than what is presented on this site.

In the end I think you will need to verify experimentally on the tools @HKUST what works or not. This will need a test mask.

Personally I would look again if LOCOS would not be a possible route given all the complexity of STI.

greets,

Staf.