24 Mar
2018
24 Mar
'18
9:29 a.m.
In case the CMP actually has such a shitty depth control as the folks at HKUST claimed on Thursday we might have to resort to another strategy because a variation of 5 microns makes their CMP machine unusable for the STI.
Maybe etching the STI trenches after building the n-well/p-well and before the gate, and then using another expsosure step in order to open windows in the oxide for the thin-oxide+polysilicon to touch down to the wells?
Danny? Anyone? Thoughts?
Cheers David
On Saturday, 24 March 2018 4:58:37 PM HKT David Lanzendörfer wrote:
Hi What do you think about building the box isolation after constructing the wells? Any apparent downside on this I'm overlooking?
Cheers David
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Best regards
CEO, David Lanzendörfer
Lanceville Technology
22A, Block2, China Phoenix Mansion,
No.2008 Shennan Boulevard,
Futian District, Shenzhen