In case the CMP actually has such a shitty depth control as the folks at HKUST claimed on Thursday we might have to resort to another strategy because a variation of 5 microns makes their CMP machine unusable for the STI. Maybe etching the STI trenches after building the n-well/p-well and before the gate, and then using another expsosure step in order to open windows in the oxide for the thin-oxide+polysilicon to touch down to the wells? Danny? Anyone? Thoughts? Cheers David On Saturday, 24 March 2018 4:58:37 PM HKT David Lanzendörfer wrote:
Hi What do you think about building the box isolation after constructing the wells? Any apparent downside on this I'm overlooking?
Cheers David
-- Best regards CEO, David Lanzendörfer Lanceville Technology 22A, Block2, China Phoenix Mansion, No.2008 Shennan Boulevard, Futian District, Shenzhen