[Libre-silicon-devel] Access and mask set (MOSIS <-> LibreSilicon )
david.lanzendoerfer at o2s.ch
Fri Aug 3 10:18:52 CEST 2018
Hi all, hi Hagen
Today I've received the RFID card for the lab, which means I can go in there
whenever I want now :-)
Following things have come up so far:
a) We need additional pwell in the cell layouts, because we need to lift the
potential/doping of the p-substrate and I wanna keep the higher resistance in
the non active areas. Also the process contains a step for building in pwells
so that in case someone wants to use n-substrate or undoped substrate, they
can just change the doping parameters.
b) I've now figured out how to map the layers from MOSIS to GDS2 so that we
can build it with our process.
For instance ptransistor and ntransistor are both included in both masks: The
poly-mask together with polysilicon as well as the pimplant mask/nimplant
Also we will have to include the pdcontact within the pimplant mask.
@Hagen: Can you add pwells into the standard cells? Then we can actually just
use MOSIS and merge the layers accordingly to our process.
I'm now fixing up some details about our process, like the Aluminum and
isolation oxide layer thicknesses and then we can generate GDS2 files from
your layout, upload the GDS2 to the web interface, pay the mask set and get
started in the lab.
-------------- next part --------------
A non-text attachment was scrubbed...
Size: 195 bytes
Desc: This is a digitally signed message part.
More information about the Libre-silicon-devel