[Libre-silicon-devel] Access and mask set (MOSIS <-> LibreSilicon )

David Lanzendörfer david.lanzendoerfer at o2s.ch
Fri Aug 3 10:18:52 CEST 2018

Hi all, hi Hagen
Today I've received the RFID card for the lab, which means I can go in there 
whenever I want now :-)

Following things have come up so far:
a) We need additional pwell in the cell layouts, because we need to lift the 
potential/doping of the p-substrate and I wanna keep the higher resistance in 
the non active areas. Also the process contains a step for building in pwells 
so that in case someone wants to use n-substrate or undoped substrate, they 
can just change the doping parameters.
b) I've now figured out how to map the layers from MOSIS to GDS2 so that we 
can build it with our process.

For instance ptransistor and ntransistor are both included in both masks: The 
poly-mask together with polysilicon as well as the pimplant mask/nimplant 
Also we will have to include the pdcontact within the pimplant mask.

@Hagen: Can you add pwells into the standard cells? Then we can actually just 
use MOSIS and merge the layers accordingly to our process.

I'm now fixing up some details about our process, like the Aluminum and 
isolation oxide layer thicknesses and then we can generate GDS2 files from 
your layout, upload the GDS2 to the web interface, pay the mask set and get 
started in the lab.

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