[Libre-silicon-devel] Well depth, mathematics
david.lanzendoerfer at o2s.ch
Sun Feb 25 11:33:39 CET 2018
I've now gone through the theory for forming n/p-wells and it seems we have to do a diffusion simulation of the partial differential equations called the "continuity equation"/
Or does someone have a more specific equation already around which is a specific solution to the case of Silicon+Boron and Silicon+Phosphorus?
If yes, could you maybe hack a piece of LaTeX with it as content?
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