[Libre-silicon-devel] Implant stop, silicide block
david.lanzendoerfer at o2s.ch
Tue May 28 12:51:59 CEST 2019
So, after implanting the pjunction and the njunction I've put the wafer into
H3PO4 at 155 degrees Celsius.
15 minutes were enough to remove all the nitride residue within the smaller
holes, as I had expected.
I've now driven in the junction implants for 30 minutes at 900 degrees Celsius
and then covered the wafer with 30nm nitride, which will become the silicide
block and the nitride spacers.
Unfortunately, the NFF RIE had problems again today, which means I can only
etch the nitride tomorrow, given Bao manages to get the NFF RIE working again
Both machines which could dry etch the nitride are essentially broken ATM,
with the NFF RIE at least having a good chance of getting operable again
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