[Libre-silicon-devel] Maskless lithography

David Lanzendörfer leviathan at libresilicon.com
Mon Feb 24 07:43:35 CET 2020

So as Staf pointed out, EUV exposure has to be performed at a very very low
pressure, which is inconvenient to handle.
So I'd prefer DUV or normal UV light.
However, it would be of course fantastic, if we could reach feature sizes of
50nm or so.
It occured to me, that we will have an e-beam exposure unit available anyway,
at the lab, and that we can deposit all of the materials I've come across
so far, commonly used to build UV LEDs.
Do we wanna design our own (D)UV microLED matrix, maybe?
We have the manufacturing equipment anyway, and it might be a cool
selling point. And it's probably easier to manufacture than MEMs.

As kind of a side quest :-)


> You can't produce EUV with anything made of solid matter. Even DUV and
> Fluorine lasers (157nm) get absorbed way too enthusiastically. This is
> why Fluorine litho sank on arrival, and the industry stayed on 193nm.
> Switching to 157nm was requiring a change of material technology
> comparable to EUV, but long term gains were not in 157nm's favour.
> Both 157nm and EUV can make 25nm feature sizes, but that's only a
> small increment over 30-35 nm what a typical DUV system can do with
> immersion. The industry still went EUV because tech transition with it
> would ease future transition to Xray litho, which would also rely on
> similar resist chemistry and vacuum.
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