Hello
Good to know that bright/darkfield requirements are OK.
Good.
I revised the changes on the process flow, it seems correct now, except the thickness of the tunnel oxide. We will still be OK at 40V even with significantly reduced tunnel oxide thickness, as we have the nitride and the (unchanged 40nm) gate oxide over it to withstand the electric field.
The standard transistors don't have Nitride, only SONOS flash has. Or do you suggest that we use SONOS gates for being tolerant to higher voltages at the pads? Hagen and I discussed the topic and we figured for the first MCU it's sufficient to just hook everything up to the external VDD/GND rails directly. For further releases we might wanna put an internal linear power regulator though. Maybe we can provide an external LM7805 and some level-shifters on the development board first and integrate it in a further release?
Cheers David