[Libre-silicon-devel] Metal caps

Hi Ferec I've been thinking about reducing the energy of the nimplant/pimplant field implant steps and then making the implant stop nitride layer thinner on top of the diode so that we can use that nitride layer as as well as dioelectricum. So we could have polysilicon, then nitride, and then a metal layer on top. Would do you say? Nitride is a high-k material with a relative permittivity of around 7-8 compared to silicon oxide with around 4. I think a junction with 50nm depth still is good enough?

Cheers David