Hi Hagen So now after going through your layout and researching the layers it turns out we can perfectly map your layout to our process: https://www.eda.ncsu.edu/wiki/MOSIS_Layers
The only thing which is missing are pwells.
After lots of thinking I just realized that this is the only problem. Because the active area is way smaller than the nwell/pwell anyway we're not in any danger of building junctions outside of the island.
Also: When we run the STI etching after diffusion any offset in alignment won't be a problem because of the spacing between the active area and the outer edge of the nwell/pwell. So we can just expose the pwell and nwell mask for the STI isolation etch.
I've started to add pwells, please have a look at my pull request: https://github.com/chipforge/PearlRiver/pull/2
Cheers David
I did not look carefully enough and thought all metal1 was shorted between center ground pin and the other pins. I know principle of 4-point measurement also called force/sense. I have problem figuring out how it is applicable to this design. Could you give example for one of the structures which pads are used for force and which for sense ? You may not be able to simulate structure exactly but you can use some assumed values to see if measurement procedure will actually work. Best to include all (parasitic) junctions in such simulation. Speaking from experience they often can cause problems when sharing pins when they are unwanted biased in forward.