Hi
as mentioned previously i have been told by a university that they are happy to put forward libre (and only libre) designs into actual silicon at zero charge. it's a 180nm fab.
It's basically the same then as we have here in Hong Kong. A lab where they can run a process manually. As soon as we've got verified our process with 1um on the HKUST machines, they can try to set it up with their machines. We can actually go down far below 180nm here by using nano-imprint stamps. The question is more about the geometry required to produce working circuits at these sizes... If that university is interested into joining the #LibreSilicon project and help with the R&D they're welcome.
Cheers David