[Libre-silicon-devel] Question: CMP vs. BHF

Hi During the meeting we found out that we don't need a nitride hard mask but can use an oxide mask in order to etch silicon with a plasma etcher. Also I've found out that the variation of the CMP machine is terrible (~5um!) Now that we have oxide should we just skip the CMP step and just grow our process oxide for the n-well/p-well construction over it?

@Staf: Can you maybe join this weeks mumble meeting and give some feedback? I'll update the document until then, so that we can discuss it.

Cheers David