Hi folks So, after implanting the pjunction and the njunction I've put the wafer into H3PO4 at 155 degrees Celsius. 15 minutes were enough to remove all the nitride residue within the smaller holes, as I had expected. I've now driven in the junction implants for 30 minutes at 900 degrees Celsius and then covered the wafer with 30nm nitride, which will become the silicide block and the nitride spacers. Unfortunately, the NFF RIE had problems again today, which means I can only etch the nitride tomorrow, given Bao manages to get the NFF RIE working again by then. Both machines which could dry etch the nitride are essentially broken ATM, with the NFF RIE at least having a good chance of getting operable again tomorrow.

-lev