Hi all So I've now received my own clean room suit and it's now hanging there close to the air shower door at the entrance to the clean room. Also we found out today that there is still an issue with the RFID card, which might be caused by the fact that they haven't sent us the bill for the rent yet and so we haven't paid yet either... No cause for worrying though, because I've got the contract signed and the access card, it's most likely bureaucratic processes and so.

Anyway. This Saturday I move into the new apartment and Hagen should be arriving here in Hong Kong and attend the orientation course and the exam soon after arrival, so that he can get his own user card for accessing the lab. We haven't gotten a clear date from Terry yet, because she's out of office until Wednesday.

Also: I've now fixed up some of the stuff Tim suggested and introduced a poly resistor type (layer: resistor) in the scmos specs for Magic.

This will be merged by cifoutput into the poly mask layer as well as into the silicide_stop layer in a 1 lambda bloated form.

In it's written scmos8m.tech: layer CRG rp calma 67 0

But I wanna make sure that even with an alignment offset, the whole poly stripe is being covered by oxide, that's why I wanna bloat it by one lambda.

Like: layer CRG rp grow lambda_1 calma 9 0

Anything speaking against it?

Cheers David