4 Nov
2018
4 Nov
'18
2:13 p.m.
Hello David, Acc. to the last conversation, the following concerns are identified (some may be RTFM): - Step 8.3 equipment is incorrect - Also step 8.3, is a tunnel oxide of 40nm thick is thin enough, or we need thinner? - Between 13.8 and 13.9, a cleaning step seems to be missing - When are the drain/source implants driven in? Is the annealing during silicide formation sufficient for drive-in? - The implantation dose and acceleration for the wells and the base/emitter layers are the same. - Implant stop nitride is 40nm grown, but etching is only for 10nm. - Al etch time is for 600nm, but the metal layer is 620nm thick. Also, will the Al etcher pass trough Ti?
Regards, Ferenc