David Lanzendörfer schreef op za 24-03-2018 om 16:54 [+0800]:
Hi During the meeting we found out that we don't need a nitride hard mask but can use an oxide mask in order to etch silicon with a plasma etcher. Also I've found out that the variation of the CMP machine is terrible (~5um!) Now that we have oxide should we just skip the CMP step and just grow our process oxide for the n-well/p-well construction over it?
@Staf: Can you maybe join this weeks mumble meeting and give some feedback? I'll update the document until then, so that we can discuss it.
I'm sorry but I am spread too thin and have to focus on my project. Anyway I don't know more about CMP than what is presented on this site. In the end I think you will need to verify experimentally on the tools @HKUST what works or not. This will need a test mask. Personally I would look again if LOCOS would not be a possible route given all the complexity of STI.
greets, Staf.