Hi Ferec
I've been thinking about reducing the energy of the nimplant/pimplant field
implant steps and then making the implant stop nitride layer thinner on top of
the diode so that we can use that nitride layer as as well as dioelectricum.
So we could have polysilicon, then nitride, and then a metal layer on top.
Would do you say? Nitride is a high-k material with a relative permittivity of
around 7-8 compared to silicon oxide with around 4.
I think a junction with 50nm depth still is good enough?
Cheers
David